1/10 december 2000 STP8NC50 - STP8NC50fp stb8nc50-1 n-channel 500v - 0.7 w - 8a to-220/to-220fp/i2pak powermesh?ii mosfet n typical r ds (on) = 0.7 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drives absolute maximum ratings (?)pulse width limited by safe operating area (*) limited only by maximum temperature allowed type v dss r ds(on) i d stp(b)8nc50(-1) 500 v < 0.85 w 8 a STP8NC50fp 500 v < 0.85 w 8 a symbol parameter value unit stp(b)8nc50(-1) STP8NC50fp v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (r gs = 20 k w ) 500 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 8 8(*) a i d drain current (continuos) at t c = 100c 5.4 5.4(*) a i dm ( l ) drain current (pulsed) 32 32(*) a p tot total dissipation at t c = 25c 135 40 w derating factor 1.075 0.32 w/c dv/dt (1) peak diode recovery voltage slope 3 v/ns v iso insulation withstand voltage (dc) - 2000 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 8a, di/dt 100a/s, v dd v (br)dss , t j t jmax. internal schematic diagram to-220 to-220fp 1 2 3 i 2pak 1 2 3 www.datasheet.in
STP8NC50/fp/stb8nc50-1 2/10 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220/i2pak to-220fp rthj-case thermal resistance junction-case max 0.93 3.12 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 8a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 600 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 4 a 0.7 0.85 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 8a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =4a 7.5 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1050 pf c oss output capacitance 165 pf c rss reverse transfer capacitance 25 pf www.datasheet.in
3/10 STP8NC50/fp/stb8nc50-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250 v, i d = 4 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 19 ns t r rise time 14 ns q g total gate charge v dd = 400v, i d = 8 a, v gs = 10v 36 46 nc q gs gate-source charge 5 nc q gd gate-drain charge 18.2 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 8 a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 13 ns t f fall time 15 ns t c cross-over time 26 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 8 a i sdm (2) source-drain current (pulsed) 32 a v sd (1) forward on voltage i sd = 8 a, v gs = 0 1.6 v t rr reverse recovery time i sd =8 a, di/dt = 100a/s v dd = 100v, t j = 150c (see test circuit, figure 5) 470 ns q rr reverse recovery charge 3.2 c i rrm reverse recovery current 13.7 a safe operating area for to-220/i2pak safe operating area for to-220fp www.datasheet.in
STP8NC50/fp/stb8nc50-1 4/10 transfer characteristics thermal impedence for to-220fp thermal impedence for to-220/i2pak output characteristics transconductance static drain-source on resistance www.datasheet.in
5/10 STP8NC50/fp/stb8nc50-1 gate charge vs gate-source voltage capacitance variations normalized gate threshold voltage vs temp. source-drain diode forward characteristics normalized on resistance vs temperature www.datasheet.in
STP8NC50/fp/stb8nc50-1 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load www.datasheet.in
7/10 STP8NC50/fp/stb8nc50-1 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c www.datasheet.in
STP8NC50/fp/stb8nc50-1 8/10 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data www.datasheet.in
9/10 STP8NC50/fp/stb8nc50-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data www.datasheet.in
STP8NC50/fp/stb8nc50-1 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com www.datasheet.in
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